Silicon Nitride | Si<sub>3</sub>N<sub>4</sub>

Silicon Nitride | Si₃N₄

MARUWA silicon nitride products have superb characteristics such as high mechanical strength, toughness, and thermal conductivity. As the perfect material for highly reliable products, our silicon nitride substrates are utilized in power electronics modules.

Applications using our silicon nitride (Si3N4) products : Circuit substrate (DBC, DPC, AMB, DBA, thick film, thin film), heat spreader.

Material Characteristics for Alumina Substrates (Al₂O₃), Zirconia Toughened Alumina Substrates (Al₂O₃/ZrO₂), Aluminum Nitride (AlN) Substrates,and Silicon Nitride(Si₃N₄)

		Condition	Unit	Al₂O₃		Al₂O₃/ZrO₂	AlN	Si₃N₄
		Condition	Unit	HA-96-2	HBS	ZTA	AN-170	SN-90
Material		-	-	96%	96.5%	Al₂O₃/ZrO₂	AlN	Si₃N₄
Color		-	-	White	White	White	Gray	Gray
Bulk density		-	g/㎤	3.75	3.75	4.00	3.30	3.22
Surface roughness Ra		-	µm	0.4	0.3	0.2	0.2	0.4
Reflectivity		0.3-0.4mmt	%	70	70	80	35	-
Reflectivity		0.8-1.0mmt	%	80	80	90	25	-
Mechanical	Bending strength	3-point method	MPa	400	500	700	450	800
	Modulus of elasticity	-	GPa	330	330	310	320	310
	Vickers hardness	-	GPa	14	14	15	11	15
	Fracture toughness	IF method	MPa･√m	3.0	-	3.5	3.0	6.5
Thermal	Coefficient of thermal expansion	40-400°C	10^-6/K	6.7	6.7	7.1	4.6	2.6
	Coefficient of thermal expansion	40-800°C	10^-6/K	7.8	7.8	8.0	5.2	3.1
	Thermal conductivity	25°C	W/(m･K)	24	24	27	180	85
	Thermal conductivity	300°C	W/(m･K)	12	12	16	120	-
	Specific heat	25°C	J/(㎏･K)	750	750	720	720	680
Electrical	Dielectric constant	1MHz	-	9.8	9.8	10.2	8.5	7.8
	Dielectric loss factor	1MHz	10^-3	0.2	0.2	0.2	0.3	0.4
	Volume resistivity	25°C	Ω･㎝	>10¹⁴	>10¹⁴	>10¹⁴	>10¹⁴	>10¹⁴
	Breakdown strength	DC	㎸/㎜	>15	>15	>15	>15	>15