Ceramics

Silicon Nitride | Si<sub>3</sub>N<sub>4</sub>

Silicon Nitride | Si3N4

MARUWA silicon nitride products have superb characteristics such as high mechanical strength, toughness, and thermal conductivity. As the perfect material for highly reliable products, our silicon nitride substrates are utilized in power electronics modules.

Applications using our silicon nitride (Si3N4) products : Circuit substrate (DBC, DPC, AMB, DBA, thick film, thin film), heat spreader.

Material Characteristics for Alumina Substrates (Al2O3), Zirconia Toughened Alumina Substrates (Al2O3/ZrO2), and Aluminum Nitride (AlN) Substrates,and Silicon Nitride(Si3N4)

Condition Unit Al2O3 Al2O3/ZrO2 AlN Si3N4
HA-96-2 HBS ZTA AN-170 SN-90
Material - - 96% 96.50% Al2O3/ZrO2 AlN Si3N4
Color - - White White White Gray Gray
Bulk density - g/㎤ 3.75 3.75 4.00 3.30 3.22
Surface roughness Ra - µm 0.4 0.3 0.2 0.3 0.4
Reflectivity 0.3-0.4mmt % 70 70 80 35 -
0.8-1.0mmt 80 80 90 25 -
Mechanical Bending strength 3-point method MPa 400 500 700 450 800
Modulus of elasticity - GPa 330 330 310 320 310
Vickers hardness - GPa 14 14 15 11 15
Fracture toughness IF method MPa・√m 3.0 - 3.5 3.0 6.5
Thermal Coefficient of thermal expansion 40-400°C 10-6/K 6.7 6.7 7.1 4.6 2.6
40-800°C 7.8 7.8 8.0 5.2 3.1
Thermal conductivity 25°C W/(m・K) 24 24 27 180 85
300°C 12 12 16 120 -
Specific heat 25°C J/(㎏・K) 750 750 720 720 680
Electrical Dielectric constant 1MHz - 9.8 9.8 10.2 9.0 9.0
Dielectric loss factor 1MHz 10-3 0.2 0.2 0.2 0.2 0.2
Volume resistivity 25°C Ω・㎝ >1014 >1014 >1014 >1014 >1014
Breakdown strength DC ㎸/㎜ >15 >15 >15 >15 >15

Characteristic Values

  • Characteristic Values
  • Characteristic Values

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