Ultra High Purity Fine Ceramic SiC Components (PureBeta)

Ultra High Purity Fine Ceramic SiC Components (PureBeta)

PureBeta is an ultra-high purity, high density sintered SiC exhibiting superior properties which make it suitable for strict environments, such as semiconductor devices production.

Impurity content (PureBeta)

PureBeta combines high purity of 6N (metal impurities below 1 ppm) with high density (98% of the theoretical density).

Element Bulk
B 0.02 -
Na <0.01 -
Al 0.08 -
K <0.01 <DL
Ti 0.02 <DL
Cr 0.02 <DL
Mg 0.02 -
Fe 0.05 0.02
Co <0.01 <DL
Ni <0.01 <DL
Cu 0.04 <DL
Zn 0.01 <DL
W <0.01 <DL

Bulk: measured by Glow Discharge Mass Spectroscopy (GD-MS)
Surface: measured by Total Reflection X-ray Fluorescence (TXRF)
DL: Detection Limit
*Analytical values mentioned on the left are representative values only.

Comparison of SiC with other materials

Our proprietory production method allows us to manufacture unique sintered SiC material without using any metal agent.

Property SiC
Si C SiO2 Al2O3 AlN
Density g/cm³ 3.15 2.33 1.55 2.1 3.9 3.2
Vickers Hardness - 2200 1000 - 800 1900 1800
Bending Strength MPa 600 300 120 40 500 300
Modulus of Elasticity GPa 390 190 28 66 400 320
Fracture Toughness MPa/m0.5 4.4 - - - 3.5 3.0
Coefficient of Thermal Expansion E-6/K 4.3 3.9 3.2 0.5 7.9 4.0
Thermal Conductivity W/m·K 230 160 8 1 38 170
Volume Resistivity Ω·cm 2E-02 2E+04 4E-03 2E-02 1E+14 1E+14

*Values are representative values only.

PureBeta Specification

Polytype Polycrystalline ß-SiC
Production Method Hot Press Sintering
Maximum Part Size ≤Φ480mm x 100mm thickness
Corrosion Resistance Excellent resistance to Hydrofloric Acid, Ion and Plasma
Maximum Operating Temperature In Vacuum: 1400°C, Under Atmospheric Pressure 1700°C
Application High purity semiconductor parts, Heater products

Various physical properties (PureBeta)

Property PureBeta Measurement Method
Structure - Poly ß-SiC X-Ray Analysis
Density g/cm³ 3.15 Archimedes' Method
Vickers Hardness - 2200 Vickers Hardness Tester
Bending Strength MPa 600 Three-point Flexural Test
Modulus of Elasticity GPa 390 Ultrasonic Pulse-Echo Method
Poisson ratio - 0.15 Ultrasonic Pulse-Echo Method
Coefficient of Thermal Expansion /K 4.3×10-6 Differential Dilatometer (RT~1000°C)
Thermal Conductivity W/m·K 230 Laser Flash Method (RT)
Specific heat
0.68 Differential Scanning Calorimeter (RT)
Volume Resistivity Ω·cm 0.02 4-Points Probe Method (RT)


Parts for compound semiconductor manufacturing

Extremely durable and reliable parts produced entirely from ultra-high purity bulk SiC are optimal for GaN-based devices (such as blue and white LEDs) manufacturing.


Ultra high purity sintered SiC Dummy Wafers

High performance dummy wafers with excellent cost performance can be used in various applications. Outstanding shape stability, corrosion resistance, and heat resistance allow for long-term reusability.


Heater Elements

High conductivity allows for a quick raise from room temperature to 1700°C. In addition, its high durability makes it very effective for heating in air or in reactive gas atmosphere.


Heater Cover Plates

Plates protecting the heater stage during process chamber conditioning.


Ultra high purity SiC Heater Units

Ground-breaking wafer heating units made by combination of ultra-high purity SiC material with bonding technology, which covers almost entire temperature range of Si semiconductor device manufacturing (structural material is high-purity quartz).
Our unique thermal analysis system enables custom design tailored to your equipment and greatly expands the possibilities of single-wafer heat treatment processes (annealing, various film depositions, etc.).


Sputtering Targets

Can be used for deposition of optical film for fabrication of SiO2 film by laser optical waveguides and for various protective films for mechanical purposes. In addition, its high conductivity is extremely effective in improving efficiency of DC sputtering.


Electrodes & Rings

Excellent plasma resistance, high durability and long lifetime. Furthermore, allowing for particles reduction.


Electrode Bonded Heaters

Our original SiC-SiC bonding technology allows for joining heating elements with electrodes. Temperature of the connection can be controlled by adjusting length and thickness of the electrodes.

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