Silicon Nitride Substrate
Features
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High Bending Strength about Twice as high as Alumina and Aluminum Nitride (AlN) Substrate
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High Thermal Conductivity about Three Times Higher than Alumina and ZTA substrate
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Excellent Insulation Properties, High Dielectric Breakdown Voltage, High Surface Resistivity / Volume Resistivity
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Coefficient of Thermal Expansion (CTE) Close to Silicon
Applications
Circuit Substrate, Heatsink, Heat Spreader
Characteristic Values
| Item | Unit | Si3N4 | ||
| SN-90 | ||||
| Material | - | - | Si3N4 | |
| Color | - | - | Gray | |
| Bulk density | - | g/㎤ | 3.22 | |
| Surface roughness Ra | - | µm | 0.4 | |
| Reflectivity | 0.3-0.4mmt | % | - | |
| 0.8-1.0mmt | - | |||
| Mechanical | Bending strength | 3-point method | MPa | 800 |
| Modulus of elasticity | - | GPa | 310 | |
| Vickers hardness | - | GPa | 15 | |
| Fracture toughness | IF method | MPa･√m | 6.5 | |
| Thermal | Coefficient of thermal expansion | 40-400°C | 10-6/K | 2.6 |
| 40-800°C | 3.1 | |||
| Thermal conductivity | 25°C | W/(m･K) | 85 | |
| 300°C | - | |||
| Specific heat | 25°C | J/(㎏･K) | 680 | |
| Electrical | Dielectric constant | 1MHz | - | 7.8 |
| Dielectric loss factor | 1MHz | 10-3 | 0.4 | |
| Volume resistivity | 25°C | Ω･㎝ | >1014 | |
| Breakdown strength | DC | ㎸/㎜ | >15 | |
General Dimension
| Item | Unit | Specification |
| Standard Size | inch | 5.5" × 7.5" |
| Tolerance | ±1.0% NLT:±0.1㎜ | |
| Thickness | ㎜ | 0.25~0.635 |
| Tolerance | ±10% NLT:±0.04㎜ | |
| Warpage | ㎜ | 0.002/㎜ |
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