Ceramics

Silicon Nitride Substrate

Silicon Nitride Substrate

Features


Silicon Nitride Substrate
  • High Bending Strength about Twice as high as Alumina and Aluminum Nitride (AlN) Substrate

  • High Thermal Conductivity about Three Times Higher than Alumina and ZTA substrate

  • Excellent Insulation Properties, High Dielectric Breakdown Voltage, High Surface Resistivity / Volume Resistivity

  • Coefficient of Thermal Expansion (CTE) Close to Silicon

Applications


Circuit Substrate, Heatsink, Heat Spreader

Characteristic Values


Item Unit Si3N4
SN-90
Material - - Si3N4
Color - - Gray
Bulk density - g/㎤ 3.22
Surface roughness Ra - µm 0.4
Reflectivity 0.3-0.4mmt % -
0.8-1.0mmt -
Mechanical Bending strength 3-point method MPa 800
Modulus of elasticity - GPa 310
Vickers hardness - GPa 15
Fracture toughness IF method MPa・√m 6.5
Thermal Coefficient of thermal expansion 40-400°C 10-6/K 2.6
40-800°C 3.1
Thermal conductivity 25°C W/(m・K) 85
300°C -
Specific heat 25°C J/(㎏・K) 680
Electrical Dielectric constant 1MHz - 7.8
Dielectric loss factor 1MHz 10-3 0.4
Volume resistivity 25°C Ω・㎝ >1014
Breakdown strength DC ㎸/㎜ >15

General Dimension


Item Unit Specification
Standard Size inch 5.5" × 7.5"
Tolerance ±1.0% NLT:±0.1㎜
Thickness 0.25~0.635
Tolerance ±10% NLT:±0.04㎜
Warpage 0.002/㎜

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