Electronic Components / Devices

MIB2008M-W Series

MIB2008M-W Series

Features


MIB2008M-W
  • Shielded,small foot print and low profile power inductors. 2.0mmX2.0mm(Typ)Xh0.8mm(Max)

  • Low noise and flux by closed magnetic path structure.

Applications


DC/DCconverters for Cellular phones, LCD Pannel and others.

Structure


MIB2008M-W

Dimensions

【MIB2008M-W Series】

Recommended Land Pattern


Specifications


(Typical)
Part number Inductance
L [µH] *1
DC resistance
Rdc [Ω] *2
Rated current
Idc1 [A] *3
Operating temperature range
Ta[°C] *4
MIB2008M-R50W 0.5±30% 0.086 1.71 / 1.61 -40~+125
MIB2008M-1R0W 1.0±30% 0.11 1.43 / 1.39 -40~+125
MIB2008M-2R2W 2.2±20% 0.25 0.93 / 0.92 0.92
MIB2008M-3R3W 3.3±20% 0.33 0.76 / 0.83 -40~+125
MIB2008M-4R7W 4.7±20% 0.53 0.61 / 0.61 -40~+125

*1 Ta=25°C、Idc=0A

*2 Ta=25°C

*3 Idc1:Inductance change ratio |△L/L|≦30% Idc2:Temperature rise △T≦40°C

*4 Including self temperature rise

DC bias current characteristics


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