Electronic Components / Devices

MIB2010M-W Series

MIB2010M-W Series

Features


MIB2010M-W
  • Shielded,small foot print and low profile power inductors. 2.0mmX2.0mm(Typ)Xh1.0mm(Max)

  • Low noise and flux by closed magnetic path structure.

Applications


DC/DCconverters for Cellular phones, LCD Pannel and others.

Structure


MIB2010M-W

Dimensions

【MIB2010M-W Series】

Recommended Land Pattern


Specifications


(Typical)
Part number Inductance
L [µH] *1
DC resistance
Rdc [Ω] *2
Rated current
Idc1 [A] *3
Operating temperature range
Ta[°C] *4
MIB2010M-R50W 0.5±30% 0.05 1.99 / 2.14 -40~+125
MIB2010M-1R0W 1.0±30% 0.069 1.53 / 1.82 -40~+125
MIB2010M-1R5W 1.5±30% 0.093 1.22 / 1.64 -40~+125
MIB2010M-2R2W 2.2±20% 0.13 1.04 / 1.29 -40~+125
MIB2010M-3R3W 3.3±20% 0.18 0.83 / 1.15 -40~+125
MIB2010M-4R7W 4.7±20% 0.27 0.66 / 0.90 -40~+125
MIB2010M-6R8W 6.8±20% 0.43 0.57 / 0.68 -40~+125
MIB2010M-100W 10.0±20% 0.7 0.47 / 0.53 -40~+125
MIB2010M-150W 15.0±20% 1.05 0.37 / 0.43 -40~+125
MIB2010M-220W 22.0±20% 1.36 0.31 / 0.38 -40~+125

*1 Ta=25°C、Idc=0A

*2 Ta=25°C

*3 Idc1:Inductance change ratio |△L/L|≦30% Idc2:Temperature rise △T≦40°C

*4 Including self temperature rise

DC bias current characteristics


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