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The thin-film substrates are the result of the fusion of various time-tested ceramic materials and the thin-film metalizing technology developed over many years. The materials permit the production of sophisticated circuit substrates that have physical, chemical properties that meet customers' needs as well as high-degree integration and excellent electric properties materialized by thin-film metalization. |
■Applications
Our thin-film substrates are produced continuously from preparation of ceramic to thin-film formation, thereby permitting stable quality, low cost, and quick delivery.
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Optical information (optical storage) and optical communication |
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Thanks to its high thermal conductivity, our Aluminum Nitride (AIN) can meet the needs for large heat radiation that will be demanded in future. Since the coefficient of thermal expansion is similar to that of Si semiconductors and compound semiconductors, it is widely used for applied circuit substrates in the optical market. |
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High frequency |
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We are manufacturing wide-ranging dielectric materials including Alumina (Al2O3) and low-/high-degree dielectric materials. Fusion of the time-tested thin-film formation technology permits application to RF circuit substrates and single-layer capacitors(SLC). |
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■Outline construction of MARUWA AIN submount
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■Some kinds of MARUWA submount with metalization
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■Ceramic materials and their general characteristics
| Item |
Alumina Al2O3 |
AlN |
Microwave dielectric
ceramic |
| MA92W |
MA92B |
AS970 |
HA996 |
M-AlN |
S-AlN |
| Composition (wt%) |
92 |
92 |
96 |
99.6 |
95 |
99 |
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| Color |
white |
purple |
white |
white |
gray |
baige |
Each color |
| Density [g/cm3] |
3.6 |
3.8 |
3.7 |
3.9 |
3.3 |
3.3 |
3.0~5.7* |
Thermal
characteristics |
Coefficient of thermal
expansion [ppm/°C]
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7 |
7.3 |
7.3 |
8.1 |
4 |
4 |
9.6~12.3* |
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Thermal conductivity
[w/mK]
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16 |
15 |
21.8 |
29.3 |
170 |
200 |
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Functional
characteristics |
Bending strength
[Mpa]
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≥320 |
≥300 |
320 |
400 |
≥300 |
≥300 |
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Electric
characteristics |
Dielectric constant
[1MHz] 25°C
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9.0 |
9.5 |
9.4 |
9.7 |
9.0 |
9.0 |
7~200* |
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Dielectric loss
[1MHz] 25°C
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<0.1% |
<0.3% |
0.03% |
<0.01% |
<0.0%4 |
<0.03% |
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Volume resistivity
[Ωcm]
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>1012 |
>1012 |
>1014 |
>1013 |
>1014 |
>1014 |
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Dielectric strength
[Kv/mm]
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>10 |
>10 |
14 |
18 |
15 |
15 |
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*Refer to individual specifications for the detailed physical properties.
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■Thin-film metalization and its general specifications
According to the standards specification, the active metal Ti is used in the metal layer at the interface with ceramic, and Au that permits wire bonding is used in the upper layer.
When used as a circuit substrate, the product permits high reliability and high-degree integration by the dry etching system, and low cost by plating wet etching system.
In order to mount various elements, a thin-film eutectic solder layer,thin-film resistor, and via-hole are also available.
| Content |
Standard Specification |
| Substrate material |
(1)Material
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Alumina 99.5% (Al2O3), Alumina 96%
Dielectric substrate ε38, ε93, and ε117
Aluminum nitride(AlN)
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(2)Thickness
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0.1mm~1.5mm/4mil~60mil
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(3)Work size
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50.8mm□ (2inch□) . 2inchx4inch□ , 3inch |
Film specification
(Conductor) |
(1)Film composition/
film thickness
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| Dry etching |
Ti/Pt/Au=0.06/0.2/0.3μm~2.0μm approximately
Ti/Pd/Au=0.06/0.2/2.0μm~10.0μm approximately |
| Wet etching |
Ti/Pd/Au=0.06/0.2/2.0μm~10.0μm approximately |
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Film specifications.
(Resistance body) |
(1)Seat resistance
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25Ω/□, 50Ω/□(±20%)
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| (2)Film composition |
Tantalum nitride (Ta2N)
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Film specification
(Solder) |
(1)Film composition/
film thickness |
Au/Sn 1.5μm~10μm
Ag/Sn 1.5μm~10μm
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Processing specification
(Thin film circuit) |
(1)Minimum line & space |
Dry etching L/S≥10μm
Wet etching L/S : 20μm/20μm±10μm
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Processing specification
(Machining) |
(1)Cutting accuracy |
±50μm
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| Quality assurance |
Characteristics to be inspected |
Measurement inspection machine
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(1)Size
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Measuring microscope
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| (2)Film thickness |
X-ray fluorescence. Surface rough meter
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| (3)Resistance |
Digital multi meter
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| (4)Externals |
Microscope
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(5)Wire strength
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Pltestar
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■Standard Specifications by Wet Etching
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minimum size
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A
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Conductor size
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0.02mm
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B
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Pattern interval
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0.02mm
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C
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Resistance body size(thickness)
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0.05mm |
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D
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Resistance body size(length)
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0.05mm
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E
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Substance thickness - Pattern interval
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0.05mm
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F
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Pattern - hole interval
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0.1mm
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G
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Via hole - Pattern interval
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0.1mm
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H
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Via hole
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1.5tmm (t=Substrate thickness)
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I
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Via hole interval |
0.25mm
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COPYRIGHT 2009 MARUWA Co., Ltd. ALL RIGHT RESERVED.
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